Publications by Gerd Schön

  1. I. Weymann, J. König, J. Martinek, J. Barnaś, G. Schön
    Tunnel magnetoresistance of quantum dots coupled to ferromagnetic leads in the sequential and cotunneling regimes
    Phys. Rev. B 72, 115334 (2005)
  2. I. Weymann, J. Barnaś, J. König, J. Martinek, G. Schön
    Zero-bias anomaly in cotunneling transport through quantum-dot spin valves
    Phys. Rev. B 72, 113301 (2005)
  3. J. Martinek, M. Sindel, L. Borda, J. Barnaś, R. Bulla, J. König, G. Schön, K. Mae, J. Von Delft
    Gate-controlled spin splitting in quantum dots with ferromagnetic leads in the Kondo regime
    Phys. Rev. B 72, 121302 (2005)
  4. J. Martinek, J. Barnaś, G. Schön, S. Takahashi, K. Mae
    Nonequilibrium spin fluctuations in in non-magnetic single electron transistors and quantum dots
    J. Supercond. 16, 343 (2003)
  5. J. Martinek, Y. Utsumi, H. Imamura, J. Barnaś, K. Mae, G. Schön
    Kondo effect in quantum dots coupled to ferromagnetic electrodes
    Physica E 18, 75 (2003)
  6. J. Martinek, J. Barnaś, K. Mae, H. Schoeller, G. Schön
    Spin accumulation in ferromagnetic single-electron transistors
    Physica E 18, 54 (2003)
  7. J. Martinek, Y. Utsumi, H. Imamura, J. Barnaś, K. Mae, J. König, G. Schön
    Kondo effect in quantum dots coupled to ferromagnetic leads
    Phys. Rev. Lett. 91, 127203 (2003)
  8. J. Martinek, M. Sindel, L. Borda, J. Barnaś, J. König, G. Schön, J. Von Delft
    Kondo Effect in the Presence of Itinerant-Electron Ferromagnetism Studied with the Numerical Renormalization Group Method
    Phys. Rev. Lett. 91, 247202 (2003)
  9. J. Martinek, J. Barnaś, A. Fert, K. Mae, G. Schön
    Transport in magnetic nanostructures in the presence of Coulomb interaction
    J. Appl. Phys. 93, 8265 (2003)
  10. J. Martinek, J. Barnaś, K. Mae, H. Schoeller, G. Schön
    Spin accumualation in ferromagnetic single-electron transistors in the cotunneling regime
    Phys. Rev. B 66, 014402 (2002)
  11. J. Martinek, J. Barnaś, K. Mae, H. Schoeller, G. Schön
    Spin accumualation and cotunneling effects in ferromagnetic single-electron transistors
    J. Magn. Magn. Mater. 240, 143 (2002)